Research on Carrier Correlation in Ballistic Transport Nano-MOSFETs
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چکیده
منابع مشابه
Research on Carrier Correlation in Ballistic Transport Nano- MOSFETs
In this paper,the experiment proved that shot noise is suppressed by Fermi and Coulomb interaction correlation. Meanwhile, the establishment of shot noise suppression factor (Fano) in ballistic transport nano-MOSFETs the Coulomb interaction correlation and the combination of the two effects are derived from separately considering the Fermi interaction correlation. And on this basis the variatio...
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As silicon MOSFETs keep scaling down in size, the continued improvement on their logic performance is threated by their fundamental physical limits. With silicon approaching these limits, MOSFETs designed with III-V semiconductors have emerged as promising candidates to replace them. The low-effective mass of various III-V materials such as InGaAs and InAs allow both faster and more power effic...
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ژورنال
عنوان ژورنال: The Open Materials Science Journal
سال: 2017
ISSN: 1874-088X
DOI: 10.2174/1874088x01711010038